silicon multi-epitaxial npn transistor semelab limited reserves the right to change test c onditions, parameter limits and package dimensions without notice. information furnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omissions discovered in its use. semelab encourage s customers to verify that datasheets are current before placing o rders. semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 6522 issue 2 page 1 of 3 BUR50 ? high pulse power, fast switching. ? hermetic metal to3 package. ? ideally suited for motor control and power switching circuits ? screening options available absolute maximum ratings (t c = 25c unless otherwise stated) v cbo collector ? base voltage 200v v ceo collector ? emitter voltage 125v v ebo emitter ? base voltage 10v i c continuous collector current 70a i cm peak collector current t p = 10ms 100a i b base current 20a p d total power dissipation at t c = 25c 350w derate above 25c 2w/c t j junction temperature range -65 to +200c t stg storage temperature range -65 to +200c thermal properties symbols parameters min. typ. max. units r jc thermal resistance, junction to case 0.5 c/w
silicon multi-epitaxial npn transistor BUR50 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 6522 issue 2 page 2 of 3 electrical characteristics (t c = 25c unless otherwise stated) symbols parameters test conditions min. typ max. units v (br)ceo (1) collector-emitter breakdown voltage i c = 50ma 125 v v (br)ebo emitter-base breakdown voltage i e = 1.0ma 10 i ceo collector cut-off current v ce = 125v i b = 0 1.0 v cb = 200v i e = 0 0.2 i cbo collector cut-off current t c = 125c 2 i ebo emitter cut-off current v eb = 7v i c = 0 0.2 ma i c = 35a i b = 2a 1.0 v ce(sat) (1) collector-emitter saturation voltage i c = 70a i b = 7a 0.8 1.5 i c = 35a i b = 2a 1.8 v be(sat) (1) base-emitter saturation voltage i c = 70a i b = 7a 1.6 2 v i c = 5a v ce = 4v 20 140 h fe (1) forward-current transfer ratio i c = 50a v ce = 4v 15 dynamic characteristics i c = 1.0a v ce = 5v f t transition frequency f = 1.0mhz 10 16 mhz i c = 70a v cc = 60v t on turn-on time i b1 = 7a 0.5 1.2 t s storage time i c = 70a v cc = 60v 0.82 2 t f fall time i b1 = -i b2 = 7a 0.1 0.5 s notes notes notes notes (1) pulse width 300us, 2%
silicon multi-epitaxial npn transistor BUR50 semelab limited semelab limited semelab limited semelab limited coventry road, lutterworth, leicestershire, le17 4 jb telephone +44 (0) 1455 556565 fax +44 (0) 1455 5526 12 email: sales@semelab-tt.com website: http://www.semelab-tt.com document number 6522 issue 2 page 3 of 3 mechanical data dimensions in mm (inches) to3 (to - 204ae) pin 1 - base pin 2 - emitter case - collector 3 9 . 9 5 ( 1 . 5 7 3 ) m a x . 1 7 . 1 5 ( 0 . 6 7 5 ) 1 6 . 6 4 ( 0 . 6 5 5 ) 3 0 . 4 0 ( 1 . 1 9 7 ) 3 0 . 1 5 ( 1 . 1 8 7 ) 2 6 . 6 7 ( 1 . 0 5 0 ) m a x . 1 1 . 1 8 ( 0 . 4 4 0 ) 1 0 . 6 7 ( 0 . 4 2 0 ) 1 2 4 . 0 9 ( 0 . 1 6 1 ) 3 . 8 4 ( 0 . 1 5 1 ) d i a . 2 p l c s . 2 0 . 3 2 ( 0 . 8 0 0 ) 1 8 . 8 0 ( 0 . 7 4 0 ) d i a . 7 . 8 7 ( 0 . 3 1 0 ) 6 . 9 9 ( 0 . 2 7 5 ) 1 2 . 0 7 ( 0 . 4 7 5 ) 1 1 . 3 0 ( 0 . 4 4 5 ) 1 . 7 8 ( 0 . 0 7 0 ) 1 . 5 2 ( 0 . 0 6 0 ) 1 . 5 7 ( 0 . 0 6 2 ) 1 . 4 7 ( 0 . 0 5 8 ) d i a . 2 p l c s .
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